Intrinsic electric field effects on few-particle interactions in coupled GaN quantum dots

摘要

We study the multi-exciton optical spectrum of vertically coupled GaN/AlNquantum dots with a realistic three-dimensional direct-diagonalization approachfor the description of few-particle Coulomb-correlated states. We present adetailed analysis of the fundamental properties of few-particle/excitoninteractions peculiar of nitride materials. The giant intrinsic electric fieldsand the high electron/hole effective masses give rise to different effectscompared to GaAs-based quantum dots: intrinsic exciton-exciton coupling,non-molecular character of coupled dot exciton wavefunction, strong dependenceof the oscillator strength on the dot height, large ground state energy shiftfor dots separated by different barriers. Some of these effects make GaN/AlNquantum dots interesting candidates in quantum information processing.